2005-02-14 rev. 2.1 page 1 opti mos a power-transistor product summary v ds 30 v r ds(on) 6.7 m w i d 30 a feature n-channel enhancement mode logic level excellent gate charge x r ds(on) product (fom) superior thermal resistance 175c operating temperature avalanche rated d v /d t rated pg-to252-3-11 marking 2n03l07 type package ordering code SPD30N03S2L-07 pg-to252-3-11 q67042-s4091 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current 1) t c =25c i d 30 30 a pulsed drain current t c =25c i d puls 120 avalanche energy, single pulse i d =30 a , v dd =25v, r gs =25 w e as 250 mj repetitive avalanche energy, limited by t jmax 2) e ar 13 reverse diode d v /d t i s =30a, v ds =24v, d i /d t =200a/s, t jmax =175c d v /d t 6 kv/s gate source voltage v gs 20 v power dissipation t c =25c p tot 136 w operating and storage temperature t j , t stg -55... +175 c iec climatic category; din iec 68-1 55/175/56 SPD30N03S2L-07
2005-02-14 rev. 2.1 page 2 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - 0.7 1.1 k/w thermal resistance, junction - ambient, leaded r thja - - 100 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - - 75 50 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0v, i d =1ma v (br)dss 30 - - v gate threshold voltage, v gs = v ds i d =85a v gs(th) 1.2 1.6 2 zero gate voltage drain current v ds =30v, v gs =0v, t j =25c v ds =30v, v gs =0v, t j =125c i dss - - 0.01 10 1 100 a gate-source leakage current v gs =20v, v ds =0v i gss - 1 100 na drain-source on-state resistance v gs =4.5v, i d =30a r ds(on) - 7.4 9.8 m w drain-source on-state resistance v gs =10v, i d =30a r ds(on) - 5.3 6.7 1 current limited by bondwire ; with an r thjc = 1.1k/w the chip is able to carry i d = 111a at 25c, for detailed information see app.-note anps071e available at www.infineon.com/optimos 2 defined by design. not subject to production test. 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. SPD30N03S2L-07
2005-02-14 rev. 2.1 page 3 electrical characteristics parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =30a 29 58 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 1900 2530 pf output capacitance c oss - 740 990 reverse transfer capacitance c rss - 180 270 gate resistance r g - 2.3 - w turn-on delay time t d(on) v dd =15v, v gs =10v, i d =15a, r g =3.6 w - 8 10 ns rise time t r - 17 26 turn-off delay time t d(off) - 62 77.5 fall time t f - 47 59 gate charge characteristics gate to source charge q gs v dd =24v, i d =30a - 6 8 nc gate to drain charge q gd - 18 27 gate charge total q g v dd =24v, i d =30a, v gs =0 to 10v - 51 68 gate plateau voltage v (plateau) v dd =24v, i d =30a - 3.1 - v reverse diode inverse diode continuous forward current i s t c =25c - - 30 a inv. diode direct current, pulsed i sm - - 120 inverse diode forward voltage v sd v gs =0v, i f =30a - 0.9 1.3 v reverse recovery time t rr v r =15v, i f = l s , d i f /d t =100a/s - 41 51 ns reverse recovery charge q rr - 46 58 nc SPD30N03S2L-07
2005-02-14 rev. 2.1 page 4 1 power dissipation p tot = f ( t c ) parameter: v gs 3 4 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 10 20 30 40 50 60 70 80 90 100 110 120 w 150 SPD30N03S2L-07 p tot 2 drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 140 160 c 190 t c 0 4 8 12 16 20 24 a 32 SPD30N03S2L-07 i d 4 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPD30N03S2L-07 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c = 25 c 10 -1 10 0 10 1 10 2 v v ds 0 10 1 10 2 10 3 10 a SPD30N03S2L-07 i d r ds(on) = v ds / i d 1 ms 100 s t p = 14.0 s SPD30N03S2L-07
2005-02-14 rev. 2.1 page 5 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 5 10 15 20 25 30 35 40 45 50 55 60 a 75 SPD30N03S2L-07 i d v gs [v] a a 2.6 b b 2.8 c c 3.0 d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i p tot = 136 w i 10.0 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: v gs 0 10 20 30 40 50 a 65 i d 0 2 4 6 8 10 12 14 16 18 20 w 24 SPD30N03S2L-07 r ds(on) v gs [v] = d d 3.2 e e 3.4 f f 3.6 g g 3.8 h h 4.5 i i 10.0 7 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 80 s 0 0.5 1 1.5 2 2.5 3 v 4 v gs 0 5 10 15 20 25 30 35 40 45 50 a 60 i d 8 typ. forward transconductance g fs = f( i d ); t j =25c parameter: g fs 0 20 40 60 80 100 a 130 i d 0 10 20 30 40 50 60 70 s 90 g fs SPD30N03S2L-07
2005-02-14 rev. 2.1 page 6 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 30 a, v gs = 10 v -60 -20 20 60 100 140 c 200 t j 0 2 4 6 8 10 12 w 16 SPD30N03S2L-07 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds -60 -20 20 60 100 c 180 t j 0 0.5 1 1.5 v 2.5 v gs(th) 1ma 85a 11 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 5 10 15 20 v 30 v ds 2 10 3 10 4 10 pf c c iss c oss c rss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j , t p = 80 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd 0 10 1 10 2 10 3 10 a SPD30N03S2L-07 i f t j = 25 c typ t j = 25 c (98%) t j = 175 c typ t j = 175 c (98%) SPD30N03S2L-07
2005-02-14 rev. 2.1 page 7 13 typ. avalanche energy e as = f ( t j ) par.: i d = 30 a , v dd = 25 v, r gs = 25 w 25 45 65 85 105 125 145 c 185 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as 14 typ. gate charge v gs = f ( q gate ) parameter: i d = 30 a pulsed 0 10 20 30 40 50 60 nc 80 q gate 0 2 4 6 8 10 12 v 16 SPD30N03S2L-07 v gs 0,8 v ds max ds max v 0,2 15 drain-source breakdown voltage v (br)dss = f ( t j ) parameter: i d =10 ma -60 -20 20 60 100 140 c 200 t j 27 28 29 30 31 32 33 34 v 36 SPD30N03S2L-07 v (br)dss SPD30N03S2L-07
2005-02-14 rev. 2.1 page 8 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. SPD30N03S2L-07
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